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Product Detailed Parameters
- Description：TRANS NPN 100V 0.2A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：200 mA
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5830_D26Z is an NPN general-purpose amplifier transistor manufactured using Process 16 technology. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 200 mA. The device operates within a junction temperature range of -55°C to +150°C, with a total device dissipation of 625 mW at 25°C ambient temperature. Packaged in a TO-92 configuration, it offers a DC current gain (hFE) ranging from 60 to 500 depending on the collector current level.
Feature Summary
- Designed for high-voltage amplification applications
- Suitable for gas discharge display driving circuits
- Utilizes Process 16 manufacturing technology
Applications
- General purpose high voltage amplifiers
- Gas discharge display driving circuits
Procurement Notes
Verify that the D26Z suffix corresponds to the specific Tape and Reel packaging style described in the datasheet documentation. Confirm the component status as Full Production or Not In Production before finalizing procurement plans. Ensure the ordering information matches the exact manufacturer specifications provided in the official datasheet.
Selection Notes
Select this component when designing circuits requiring an NPN transistor with a 100 V collector-emitter breakdown voltage. Consider the thermal resistance characteristics and the specified operating temperature range for appropriate heat management. Compare the hFE ranges against circuit requirements to ensure adequate signal amplification performance.
Part Context
This component belongs to the discrete power and signal transistor category. It is functionally similar to other general-purpose NPN amplifiers such as the 2N5551, sharing comparable electrical characteristics and application profiles. The device is intended for standard electronic circuit designs rather than specialized RF or high-power switching roles.
Replacement Considerations
Consult the official datasheet for confirmed substitute part numbers. Verify pinout compatibility and electrical ratings match the original design requirements before implementing any alternative components.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 100 V.
What is the total device dissipation capability?
The total device dissipation is 625 mW at an ambient temperature of 25°C.
What packaging style does the D26Z suffix indicate?
The D26Z suffix indicates a Tape and Reel packaging option for the TO-92 package.
