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Product Detailed Parameters
- Description：NPN TRANSISTOR
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The 2N5840 is a silicon NPN power transistor housed in a hermetically sealed metal TO-3 (TO-204AA) package. It features a maximum collector-emitter voltage of 375 V and a continuous collector current rating of 3 A. The device is designed for high breakdown voltage applications with low collector saturation voltage characteristics, suitable for robust switching operations.
Feature Summary
- Hermetically sealed metal construction for environmental durability
- High breakdown voltage capability for demanding circuit conditions
- Low collector saturation voltage for efficient power handling
Applications
- Switching power supply circuits
- Inductive switching applications
Procurement Notes
Verify the manufacturer origin carefully, as the 2N5840 is a legacy JEDEC designation produced by multiple vendors including ISC and Semelab. Confirm that the specific lot matches the required hermetic sealing standards and pin configuration for TO-3 flange mounting. Ensure compliance with relevant military or industrial specifications if applicable to the design.
Selection Notes
Select this component when high voltage isolation and ruggedness are prioritized over size constraints. The TO-3 package requires appropriate thermal management solutions due to its metal case connection. Verify that the 3 A current rating and 375 V voltage limits align with the peak operational stresses of the target switching circuit.
Part Context
The 2N5840 belongs to a family of silicon NPN power transistors often grouped with parts like the 2N5838 and 2N5839. These devices share similar structural designs but may differ in specific voltage or gain parameters. The TO-3 package remains a standard form factor for high-power discrete semiconductors requiring reliable heat dissipation and electrical isolation.
Replacement Considerations
Cross-reference with 2N5838 and 2N5839 for potential functional substitutes within the same series. Verify pinout compatibility and ensure that alternative manufacturers' versions meet the same hermetic sealing and voltage ratings.
