2N5871

$53.16

Description：PNP POWER TRANSISTOR SILICON AMP
Series：*

SKU:3e67bd852aac Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：PNP POWER TRANSISTOR SILICON AMP
Series：*
Mfr：Microchip Technology
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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2N5871

Overview

The Microchip Technology 2N5871 is a silicon PNP power bipolar junction transistor (BJT) designed for high-power applications. It features a collector-base voltage of 60 V and a collector-emitter voltage of 60 V, supporting a continuous collector current of 7 A. The device operates with a maximum power dissipation of 115 W in a TO-3 through-hole package. It exhibits a transition frequency of 4 MHz, suitable for switching and amplification tasks requiring robust thermal performance and high current handling capabilities.

Feature Summary

High power dissipation capability for demanding thermal environments
Robust current handling with 7 A continuous collector current rating
Standardized TO-3 through-hole package for secure mounting

Applications

Power amplifier circuits
Switching regulators
Motor control systems

Procurement Notes

Verify the manufacturer origin carefully, as the 2N5871 specification has been historically produced by multiple vendors including Harris and New Jersey Semi-Conductor. Ensure the specific datasheet aligns with your design requirements regarding pinout and thermal characteristics. Confirm RoHS compliance status if required for your manufacturing process, as historical data indicates variations across different production batches and suppliers.

Selection Notes

Select this component when designing circuits requiring a PNP power transistor with moderate voltage ratings and high current capacity. The TO-3 package necessitates appropriate heat sinking solutions to maintain safe operating temperatures. Consider the 4 MHz transition frequency when evaluating high-speed switching limitations compared to modern alternatives.

Part Context

This component belongs to the class of silicon PNP power transistors. Historically associated with manufacturers like Harris Corporation and RCA, the part number represents a standard military-style specification now available from various semiconductor producers. It serves as a legacy option for high-power analog and switching designs.