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Product Detailed Parameters
- Description：TRANS PNP 60V 7A TO-3
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：7:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：2.5 @ 4A, 20V
- Power - Max：115 W
- Frequency - Transition：4MHz
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-3
- Grade：-
- Qualification：-
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Overview
The Harris Corporation 2N5871 is a single PNP silicon power bipolar junction transistor designed for high-power applications. It features a collector-emitter voltage rating of 60 V and a continuous collector current capacity of 7 A. The device operates in a through-hole TO-3 package, supporting a maximum power dissipation of 115 W. Its transition frequency is specified at 4 MHz, with a minimum DC current gain (hFE) of 20. The component is rated for a maximum operating temperature of 200 °C.
Feature Summary
- High power dissipation capability suitable for demanding thermal environments
- Robust mechanical construction via the TO-3 metal can package
- Designed for complementary silicon power transistor configurations
Applications
- High-power amplifier circuits
- Industrial automation control systems
- Process automation modules
Procurement Notes
Verify manufacturer origin as multiple entities produce this legacy part number. Confirm package integrity and pinout compatibility before integration. Request specific datasheet revisions to ensure alignment with original Harris specifications. Validate thermal performance requirements against the 115 W dissipation limit.
Selection Notes
Select this component when high current handling and robust packaging are required. Ensure circuit design accommodates the 60 V voltage limit and 7 A current capacity. Consider thermal management strategies given the significant power dissipation potential. Verify that the PNP configuration matches the intended circuit topology.
Part Context
This transistor belongs to a family of complementary silicon power transistors. It is often paired with NPN counterparts for push-pull amplifier stages. The TO-3 package provides superior heat sinking compared to plastic alternatives. Legacy availability persists across various semiconductor manufacturers.
Replacement Considerations
Publicly confirmed substitute part numbers include 2N5872, 2N5875, 2N5876, 2N5879, 2N5880, 2N5883, 2N5884, 2N6246, 2N6247, 2N6248, 2N6317, and 2N6318.
