2N5875

Overview

The 2N5875 is a power bipolar transistor manufactured by Silicon Transistor Corporation. It is a single-element PNP silicon device housed in a metal TO-3 flange mount package with two pins. The component supports a maximum collector current of 10 A and a collector-emitter breakdown voltage of 60 V. It features a minimum DC current gain (hFE) of 20 and can operate at junction temperatures up to 200 °C. The part is not RoHS compliant.

Feature Summary

• PNP polarity configuration for power switching applications
• Metal TO-3 flange mount packaging for thermal management
• High temperature operation capability up to 200 °C

Applications

• Power amplifier circuits
• General purpose power switching
• Low frequency amplification

Procurement Notes

Verify the manufacturer origin, as the 2N5875 designation is associated with Silicon Transistor Corporation rather than Microchip Technology in official records. Confirm RoHS non-compliance status prior to integration into regulated assemblies. Ensure the TO-3 metal package dimensions match the target board layout requirements for proper mounting.

Selection Notes

Select this component when a high-current PNP transistor with robust thermal dissipation via a metal case is required. The 60 V rating and 10 A current capacity suit moderate power applications. Consider the lack of RoHS compliance if environmental regulations apply to the final product assembly.

Part Context

The 2N5875 belongs to the category of discrete power bipolar transistors. It utilizes a standard NPN/PNP nomenclature system common in legacy semiconductor manufacturing. The TO-3 package represents a traditional metal can style designed for high-power handling compared to modern plastic surface-mount alternatives.