ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 60V 15A TO-3
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：15 A
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：500µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：160 W
- Frequency - Transition：4MHz
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-3
- Grade：-
- Qualification：-
Download product information
Overview
The Harris Corporation 2N5879 is a silicon NPN power transistor designed for high-power applications. It features a maximum collector current of 15 A and a maximum power dissipation of 160 W. The device operates with a minimum DC current gain (hFE) of 20 and has a nominal transition frequency (fT) of 4 MHz. It supports a maximum operating temperature of 200 °C and utilizes a single configuration in a through-hole package.
Feature Summary
- High power handling capability with 160 W dissipation rating
- Robust thermal performance supporting operation up to 200 °C
- High current capacity suitable for demanding load applications
Applications
- High-power amplifier circuits
- Industrial switching applications
- Power supply regulation stages
Procurement Notes
Verify the manufacturer origin, as Harris Corporation's semiconductor assets were acquired by Raytheon Technologies. Confirm that the specific unit matches the original Harris specifications or the successor manufacturer's datasheet. Ensure the part number corresponds to the correct NPN variant and package style required for your circuit design.
Selection Notes
Select this component when designing circuits requiring high current handling and robust thermal stability. The 160 W power rating and 200 °C junction temperature limit make it suitable for environments where standard transistors may fail. Ensure adequate heat sinking is provided to maintain safe operating temperatures under full load conditions.
Part Context
This component belongs to the family of high-power NPN silicon transistors. It shares similar electrical characteristics with parts like the 2N5882 and 2N5871, which also feature 15 A collector current and 160 W power dissipation ratings. These devices are typically used in industrial and military-grade applications requiring reliable high-power switching.
Replacement Considerations
Verified substitutes include the 2N5882 and 2N5871. Both components share identical key electrical parameters, including 15 A collector current, 160 W power dissipation, and 4 MHz transition frequency. Verify pinout compatibility before substitution.
