2N5881

Overview

The Microchip Technology 2N5881 is a silicon NPN high-power transistor designed for robust power switching applications. It features a maximum collector current of 15 A and a total power dissipation rating of 160 W. The device operates with a collector-emitter breakdown voltage of 60 V and exhibits a transition frequency of 4 MHz. It utilizes a TO-3 through-hole package configuration, ensuring effective thermal management for high-energy loads.

Feature Summary

• High power handling capability with 160 W dissipation rating
• Low collector saturation voltage for improved efficiency
• Complementary design pairing with PNP type 2N5879

Applications

• High-current DC power switching circuits
• Complementary push-pull amplifier stages
• Industrial motor control systems

Procurement Notes

Verify the specific manufacturer source when ordering, as the 2N5881 designation is utilized by multiple semiconductor producers including Mospec and Boca Semiconductor. Confirm that the received component matches the required electrical specifications and physical package dimensions to ensure compatibility with existing circuit designs and thermal constraints.

Selection Notes

Select this component for applications requiring substantial current handling and high power dissipation in a standard TO-3 package. Ensure the operating environment supports the specified junction temperature limits and consider the complementary 2N5879 PNP transistor if balanced push-pull performance is required for the design.

Part Context

This part belongs to a family of complementary silicon high-power transistors. It serves as the NPN counterpart to the 2N5879 PNP device, enabling matched characteristics for differential and push-pull configurations. The series is engineered for demanding power electronics environments requiring reliable high-current operation.

Replacement Considerations

Public confirmed substitute part numbers include the 2N5882.