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The Central Semiconductor Corp 2N5884 PBFREE is a PNP complementary silicon epitaxial base power transistor housed in a TO-3 metal case. Designed for power amplifier and switching applications, it features a collector-emitter voltage of 80 V, continuous collector current of 25 A, and peak collector current of 50 A. The device supports a maximum power dissipation of 200 W at 25°C case temperature with a thermal resistance of 0.875 °C/W. It operates within a junction temperature range of -65 to +200 °C.
Verify the End-of-Life status via official datasheets or distributor channels before procurement. Confirm availability of remaining stock or special order options directly with the manufacturer. Ensure compatibility with existing thermal management solutions given the TO-3 package requirements.
Select this component for designs requiring high current capability and robust thermal performance in a through-hole metal can format. Verify that the circuit design accommodates the specific pinout configuration where the case serves as the collector terminal. Ensure adequate heatsinking is provided to maintain junction temperatures within the specified operating limits during operation.
This device belongs to a series of complementary silicon power transistors manufactured by Central Semiconductor Corp. It is paired with the NPN 2N5886 to form a matched complementary pair for push-pull amplifier configurations. The product line focuses on discrete semiconductors for specialized industrial and high-reliability applications.
Official documentation lists no suggested replacement part numbers for the 2N5884 PBFREE.