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The onsemi 2N5951_D27Z is an N-channel RF amplifier and JFET designed for electronic switching applications, specifically low on-resistance analog switching. It operates within a drain-gate voltage of 30 V and a gate-source voltage of -30 V. The device features a maximum total power dissipation of 350 mW at 25°C, derating by 2.8 mW/°C above this temperature. Electrical characteristics include a zero-gate voltage drain current (IDSS) ranging from 7 mA to 13 mA at 15 V, with a typical drain-source on resistance of 250 Ω. The input capacitance is 6 pF, and the reverse transfer capacitance is 2 pF at 1 MHz.
Verify the specific manufacturer origin, as the 2N5951 was originally a Fairchild Semiconductor product. Confirm that the onsemi designation corresponds to the correct datasheet revision and electrical specifications. Ensure the D27Z suffix aligns with the required tape-and-reel packaging format for automated assembly processes.
Select this component when a depletion-mode N-channel JFET is required for analog signal routing or switching. Evaluate the 250 Ω on-resistance against circuit impedance requirements. Consider the 350 mW thermal dissipation limit and ensure adequate heat sinking or airflow if operating near maximum junction temperatures.
The 2N5951 is an N-channel RF amplifier JFET historically manufactured by Fairchild Semiconductor. The part number indicates a specific package and reel configuration variant. This device belongs to the family of small-signal field-effect transistors used in high-frequency and precision analog applications.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs before considering alternative manufacturers.
The device is designed primarily for electronic switching applications such as low on-resistance analog switching.
The absolute maximum drain-gate voltage (VDG) is 30 V.
The input capacitance (Ciss) is 6 pF at a frequency of 1.0 MHz with VDS = 15V and VGS = 0V.