2N5961 PBFREE

2N5961 PBFREE

$0.24
  • Description:60V 50MA 625MW TH TRANSISTOR-SMA
  • Series:-

SKU:a540c907b47c Category: Brand:

  
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Product Detailed Parameters

  • Description:60V 50MA 625MW TH TRANSISTOR-SMA
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):2nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5961 PBFREE

Overview

The Central Semiconductor Corp 2N5961 PBFREE is an NPN silicon bipolar junction transistor manufactured using the epitaxial planar process. It is housed in a TO-92-3 through-hole package with lead-free plating. The device features a collector-emitter voltage rating of 60 V, a continuous collector current of 50 mA, and a transition frequency of 100 MHz. Thermal performance includes a total power dissipation of 625 mW at 25°C ambient temperature.

Feature Summary

  • Epoxy molded construction for environmental protection
  • Epitaxial planar process manufacturing for reliability
  • Lead-free plating option available

Applications

  • General purpose switching applications
  • Small signal amplification circuits

Procurement Notes

Verify component status before procurement as the 2N5961 series is scheduled for obsolescence and will be discontinued by the manufacturer. Confirm that the specific ordering suffix matches the required plating type, such as adding 'PBFREE' for lead-free devices. Request the official datasheet to ensure exact specifications align with design requirements prior to finalizing orders.

Selection Notes

Select this component for low-power NPN switching or amplification tasks requiring a 60V breakdown voltage and 50mA current capacity. Ensure the application operates within the 625mW thermal limits. Consider the TO-92-3 package constraints for PCB layout. Verify availability given the discontinuation status and evaluate alternative components if long-term supply stability is critical.

Part Context

This part belongs to the 2N5961 series of silicon NPN transistors produced by Central Semiconductor Corp. The series utilizes epoxy molding and epitaxial planar technology. Variants exist with different plating options, including tin/lead and lead-free configurations, distinguished by specific ordering suffixes.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the available documentation. Due to the scheduled obsolescence of the 2N5961 series, engineers should consult official replacement guides or datasheets for compatible alternatives from Central Semiconductor or other manufacturers.

2N5961 PBFREE2N5961 PBFREE
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