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Product Detailed Parameters
- Description：60V 50MA 625MW TH TRANSISTOR-SMA
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：50 mA
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：2nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5961 TRE PBFREE is an NPN silicon epitaxial planar transistor housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 60 V, a continuous collector current of 50 mA, and a transition frequency of 100 MHz. The device dissipates 625 mW of power and operates within a temperature range of -65°C to +150°C. The 'TRE' suffix indicates tape and reel packaging, while 'PBFREE' confirms lead-free plating compliance.
Feature Summary
- Epoxy molded construction utilizing epitaxial planar process technology for reliable performance
- Designed for general-purpose switching and amplification applications
- Lead-free terminal finish compliant with environmental standards
Applications
- General-purpose signal amplification circuits
- Low-power switching applications
- Audio pre-amplifier stages
Procurement Notes
Verify the specific ordering suffix required for your manufacturing needs. The 'TRE' designation specifies tape and reel packaging, which differs from cut tape or bulk options. Confirm that the 'PBFREE' lead-free specification aligns with your assembly processes and regulatory requirements before finalizing orders.
Selection Notes
Select this component when a standard NPN transistor with 60 V rating and 50 mA current capacity is required. Consider the TO-92-3 package for through-hole mounting constraints. Evaluate the 100 MHz transition frequency against your signal bandwidth requirements to ensure adequate performance for high-speed switching or amplification tasks.
Part Context
This part belongs to the Central Semiconductor 2N5961 series of silicon NPN transistors. These devices are manufactured using an epitaxial planar process and are epoxy molded for durability. The series includes variants such as the 2N5962 and 2N5963, offering different gain characteristics while maintaining similar voltage and current ratings.
Replacement Considerations
Public confirmed substitute part numbers include the 2N5961 TRE TIN/LEAD variant, which offers identical electrical specifications but utilizes tin/lead plating instead of lead-free finishes. Ensure compatibility with soldering processes when selecting between these two finish options.
