2N5961 TRE TIN/LEAD

$0.27

Description：60V 50MA 625MW TH TRANSISTOR-SMA
Series：-

SKU:26e6e40952d8 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：60V 50MA 625MW TH TRANSISTOR-SMA
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：100MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5961 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5961 TRE TIN/LEAD is a small-signal NPN silicon bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. Manufactured using an epitaxial planar process, this device features a collector-emitter voltage rating of 60 V and a continuous collector current capacity of 50 mA. It dissipates up to 625 mW of power and operates with a transition frequency of 100 MHz. The component is housed in a TO-92-3 through-hole package.

Feature Summary

Utilizes an epitaxial planar manufacturing process for reliable performance
Designed for general-purpose amplification and switching tasks
Provides high-frequency operation capabilities suitable for signal processing

Applications

General-purpose signal amplification circuits
Electronic switching applications
Small-signal processing stages

Procurement Notes

Verify the specific ordering suffix requirements when requesting Tin/Lead plated devices, as documentation indicates adding 'TIN/LEAD' to the part number is necessary for this finish. Confirm that the manufacturer accepts orders in multiples of the factory packaging quantity. Ensure compliance with RoHS regulations if lead-free alternatives are required instead of the specified tin/lead configuration.

Selection Notes

Select this component for low-power NPN switching or amplification needs requiring a standard TO-92 footprint. Consider the 60 V breakdown voltage and 50 mA current limits to ensure adequate headroom for the target circuit design. Evaluate the 100 MHz transition frequency against the operational bandwidth requirements of the application to guarantee signal integrity.

Part Context

This transistor belongs to the Central Semiconductor 2N5961 series, which includes variants such as the 2N5962 and 2N5963. These devices share similar epoxy molded silicon NPN construction and are intended for comparable low-power electronic functions. The series represents a standard offering for discrete semiconductor components used in consumer and industrial electronics.