2N5962 PBFREE

Overview

The Central Semiconductor 2N5962 PBFREE is an NPN silicon epitaxial planar transistor in a TO-92 package. It features a collector-emitter voltage of 45 V, continuous collector current of 50 mA, and power dissipation of 625 mW at 25°C ambient temperature. The device offers high DC current gain (hFE) ranging from 100 to 1000 at IC=10mA, with a transition frequency (fT) of 100 MHz. Noise figure specifications are 3.0 dB at IC=10μA and 6.0 dB at IC=100μA.

Feature Summary

• Designed for applications requiring extremely high gain and low noise characteristics
• Utilizes epoxy molded construction manufactured by the epitaxial planar process
• Provides wide operating and storage junction temperature range from -65°C to +150°C

Applications

• Low noise amplifier circuits
• High gain signal amplification stages
• Sensitive audio pre-amplification systems

Procurement Notes

Verify component status before procurement as this part has been classified as End of Life. Confirm availability through official Central Semiconductor channels or authorized distributors. Check for potential supply constraints due to discontinued status. Ensure ordering suffixes match required plating specifications if applicable.

Selection Notes

Select this component when specific low noise performance combined with high current gain is required for small signal applications. Consider the TO-92 package constraints for thermal management. Evaluate alternative sources if long-term supply stability is critical, given the End of Life classification.

Part Context

This device belongs to the 2N5961 series of silicon NPN transistors designed for high gain and low noise applications. It shares similar structural characteristics with the 2N5961 and 2N5963 variants within the same datasheet family.

Replacement Considerations

No suggested replacement part numbers are available for the 2N5962 according to the manufacturer's End of Life notice. Contact Central Semiconductor support for assistance locating alternate sources.