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Product Detailed Parameters
- Description：45V 50MA 625MW TH TRANSISTOR-SMA
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：50 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：2nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：600 @ 10mA, 5V
- Power - Max：1.5 W
- Frequency - Transition：100MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5962 TRE TIN/LEAD is a PNP general-purpose bipolar junction transistor (BJT) designed for through-hole mounting. It utilizes silicon technology and is housed in a TO-92-3 package. The device features a collector-emitter voltage of 25 V, a collector-base voltage of 25 V, and an emitter-base voltage of 5 V. It supports a continuous collector current of 600 mA with a power dissipation rating of 625 mW. The component operates within a temperature range of -65°C to +150°C and offers a gain-bandwidth product of 60 MHz.
Feature Summary
- PNP polarity configuration suitable for general-purpose amplification and switching applications
- Through-hole installation style compatible with standard PCB layouts
- Silicon-based construction ensuring stable operation across wide temperature ranges
Applications
- General-purpose amplifier circuits
- Electronic switching applications
- Small-signal processing tasks
Procurement Notes
Verify the specific ordering suffix 'TRE' confirms tape-and-reel packaging rather than bulk supply. Confirm that the 'TIN/LEAD' designation indicates the required terminal finish for compatibility with legacy soldering processes or specific regulatory requirements. Ensure the manufacturer source matches Central Semiconductor Corp specifications before finalizing procurement orders.
Selection Notes
Select this component when a PNP small-signal transistor with moderate current handling capabilities is required. The TO-92-3 package provides a compact form factor for through-hole designs. Consider the 600 mA collector current limit and 625 mW power dissipation constraints during thermal management planning. Verify that the 25 V voltage ratings align with the circuit's maximum operating conditions.
Part Context
This part belongs to the broader category of discrete bipolar transistors manufactured by Central Semiconductor. It serves as a fundamental active component in electronic circuits requiring signal amplification or control. The device represents a standard offering for general-purpose applications where reliable switching and amplification are necessary.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference electrical parameters such as voltage ratings, current limits, and package type when evaluating alternative components from other manufacturers.
