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Product Detailed Parameters
- Description：30V 50MA 625MW TH TRANSISTOR-SMA
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：50 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：2nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：1200 @ 10mA, 5V
- Power - Max：1.5 W
- Frequency - Transition：150MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N5963 APM PBFREE is a through-hole NPN silicon small signal bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage of 30V and a continuous collector current rating of 50mA. The device supports a power dissipation of 625mW in the TO-92 package, with an operating temperature range spanning from -65°C to +150°C. Key electrical characteristics include a gain bandwidth product of 150MHz and a DC current gain of 1200 at 10mA and 5V.
Feature Summary
- High DC current gain suitable for sensitive amplification applications
- Wide thermal operating range supporting extreme environmental conditions
- Low noise performance optimized for general-purpose signal processing
Applications
- Signal amplification stages
- Logic-level switching of moderate loads under 50mA
- Driver stages feeding higher-current output circuits
Procurement Notes
Verify the specific suffix 'APM' against the official datasheet to confirm pinout configuration and mechanical dimensions, as variations exist within the 2N5963 family. Ensure the procurement order explicitly specifies the lead-free (PBFREE) status to meet environmental compliance requirements. Cross-reference the manufacturer's active lifecycle status to guarantee long-term availability for production integration.
Selection Notes
Select this component when high DC current gain is required for low-level signal processing tasks. The TO-92 through-hole package facilitates easy prototyping and manual assembly. Consider the 150MHz gain bandwidth product for frequency response requirements. Evaluate the 625mW power dissipation limit against thermal management constraints in the target circuit design.
Part Context
This part belongs to the 2N5963 series of NPN silicon transistors produced by Central Semiconductor Corp. The series includes variants with different suffixes indicating specific packaging or material compositions. The 2N5963 designation generally refers to a low-noise general-purpose transistor designed for audio and RF applications requiring stable amplification characteristics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with generic 2N5963 equivalents only if pinout and electrical specifications match exactly.
