2N5963 APM TIN/LEAD

$0.14

Description：30V 50MA 625MW TH TRANSISTOR-SMA
Series：-

SKU:6b1631e41b2d Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：30V 50MA 625MW TH TRANSISTOR-SMA
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：1200 @ 10mA, 5V
Power - Max：1.5 W
Frequency - Transition：150MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5963 APM TIN/LEAD

Overview

The 2N5963 APM TIN/LEAD is an NPN silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It features a collector-emitter breakdown voltage of 30 V and a continuous collector current rating of 50 mA. The device supports a maximum power dissipation of 1.5 W in through-hole configurations, with specific variants like the APM package rated at 625 mW. It operates with a transition frequency of 150 MHz and utilizes a TO-92-3 leaded package.

Feature Summary

NPN silicon construction for general-purpose small-signal applications
Low noise performance characteristics suitable for sensitive circuitry
Through-hole mounting capability via standard leaded packages

Applications

General-purpose amplification circuits
Switching applications requiring low signal levels
Audio pre-amplifier stages

Procurement Notes

Verify the exact suffix (APM) against the required thermal and mechanical specifications. Confirm that the TIN/LEAD terminal finish meets environmental compliance requirements if RoHS exemption is necessary. Ensure the selected package variant matches the PCB footprint and power dissipation needs of the design.

Selection Notes

Select this component when a 30 V NPN transistor with moderate gain and low noise is required. Consider the 1.5 W or 625 mW power ratings depending on the specific package type chosen. Verify compatibility with existing TO-92 footprints and ensure the tin-lead termination aligns with assembly processes.

Part Context

This part belongs to the 2N5963 family of NPN silicon transistors produced by Central Semiconductor Corp. Variants include different package styles such as TO-92-3 and suffixes indicating terminal finishes. The family is designed for general electronic applications requiring reliable small-signal handling.