2N6027 PBFREE

2N6027 PBFREE

$3.23
  • Description:PROGRAMMABLE UJT 40V TO226-3
  • Series:-

SKU:0e679bccb6ae Category: Brand:

  
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Product Detailed Parameters

  • Description:PROGRAMMABLE UJT 40V TO226-3
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Voltage:40V
  • Power Dissipation (Max):300 mW
  • Voltage - Output:6V
  • Voltage - Offset (Vt):1.6 V
  • Current - Gate to Anode Leakage (Igao):10 nA
  • Current - Valley (Iv):50 µA
  • Current - Peak:2 µA
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)

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2N6027 PBFREE

Overview

The Central Semiconductor Corp 2N6027 PBFREE is a silicon programmable unijunction transistor housed in a TO-92 epoxy molded package. It features an anode-cathage voltage rating of 40 V and supports a DC forward anode current of 150 mA with a power dissipation capacity of 300 mW. The device operates within a junction temperature range of -50 to +100 °C. Key electrical characteristics include a maximum gate-to-anode leakage current of 10 nA at 40 V, a peak output voltage of 6.0 V, and a typical transition time of 80 ns.

Feature Summary

  • Features adjustable intrinsic standoff ratio, valley current, and peak current through external resistor selection
  • Includes an accessible anode gate for specialized thyristor triggering applications
  • Provides low on-state voltage operation and minimal gate-to-anode leakage current

Applications

  • Thyristor trigger circuits
  • Oscillator designs
  • Pulse generation circuits
  • Timing circuits

Procurement Notes

Verify the specific ordering suffix when sourcing this component. The PBFREE designation indicates lead-free plating options provided by the manufacturer. Confirm that the requested units match the exact part number specifications to ensure compatibility with existing circuit designs and regulatory compliance requirements.

Selection Notes

Select this component when designing circuits requiring programmable unijunction transistor behavior. Ensure the application demands a 40 V anode-cathode rating and fits within the 300 mW power dissipation limits. Consider the TO-92 through-hole package constraints for automatic insertion equipment compatibility during the layout phase.

Part Context

This device belongs to the 2N6027 series of silicon programmable unijunction transistors manufactured by Central Semiconductor Corp. It shares functional similarities with the 2N6028 model but offers distinct electrical parameter variations. The component is designed for high-volume production environments utilizing standard plastic packaging.

Replacement Considerations

Compatible substitutes include the ON Semiconductor 2N6027 and devices from New Jersey Semi-Conductors. Verify pinout alignment and electrical tolerances before implementation.

2N6027 PBFREE2N6027 PBFREE
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