2N6032

2N6032

$106.07
  • Description:TRANS NPN 90V 50A TO-204AE
  • Series:-

SKU:3f56527bed72 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 90V 50A TO-204AE
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 A
  • Voltage - Collector Emitter Breakdown (Max):90 V
  • Vce Saturation (Max) @ Ib, Ic:1.3V @ 5A, 50A
  • Current - Collector Cutoff (Max):10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 50A, 2.6V
  • Power - Max:140 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AE
  • Supplier Device Package:TO-204AE
  • Grade:-
  • Qualification:-

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2N6032

Overview

The Harris Corporation 2N6032 is a silicon NPN power bipolar junction transistor designed for high-current switching applications. It features a collector-emitter breakdown voltage of 90V and supports a maximum continuous collector current of 50A. The device is housed in a hermetically sealed metal TO-3 (TO-204AA) package with a flange mount configuration, where the case is electrically connected to the collector. This construction ensures robust thermal dissipation and reliability in demanding environments.

Feature Summary

  • Hermetically sealed metal TO-3 package for environmental protection
  • High current handling capability up to 50A
  • Collector-connected flange mount for efficient heat dissipation

Applications

  • High-power switching circuits
  • Industrial motor control systems
  • Power supply output stages

Procurement Notes

Verify the specific manufacturer origin, as the 2N6032 specification has been produced by multiple vendors including Semelab and Microchip/Microsemi. Confirm that the received component matches the required hermetic sealing standards and pinout configuration for the TO-3 package before integration into critical designs.

Selection Notes

Select this component when designing circuits requiring high current capacity and robust thermal management. The TO-3 metal package is suitable for applications where superior heat sinking is necessary. Ensure the design accounts for the collector-to-case electrical connection inherent in this package style.

Part Context

This part belongs to the family of high-power NPN silicon transistors utilizing the legacy TO-3 metal can package. It serves as a rugged alternative to plastic-packaged equivalents, offering enhanced durability and thermal performance for industrial and military-grade electronics requiring reliable high-current switching.

Replacement Considerations

Direct substitutes include the 2N6032R1 from Semelab, which shares identical electrical ratings and hermetic TO-3 packaging. Other manufacturers such as Microchip may offer equivalent specifications under different suffixes; verify pinout compatibility and thermal resistance values before substitution.

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$106.07
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