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Product Detailed Parameters
- Description：TRANS PNP DARL 80V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 40mA, 4A
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6036 is a PNP plastic Darlington complementary silicon power transistor designed for general-purpose amplifier and low-speed switching applications. It features an 80 V collector-emitter voltage rating, a continuous collector current of 4.0 A, and a peak collector current of 8.0 A. The device offers high DC current gain ranging from 500 to 15,000 at specified test conditions. It operates within a junction temperature range of -65°C to +150°C and provides a total device dissipation of 40 W at 25°C case temperature.
Feature Summary
- High DC current gain suitable for amplification tasks
- Robust thermal performance with defined safe operating area
- ESD protection exceeding 400 V machine model and 8000 V human body model
Applications
- General-purpose amplifier circuits
- Low-speed switching applications
- Complementary power transistor pairs
Procurement Notes
Verify the specific suffix 'G' indicates Pb-Free and RoHS compliance status. Confirm the TO-225 package style matches the required pinout configuration for your design. Ensure thermal management strategies align with the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component when high current gain and moderate voltage handling are required for PNP applications. Compare against the NPN counterpart 2N6039 for complementary pair designs. Evaluate thermal constraints carefully as the device relies on case temperature for maximum power dissipation ratings.
Part Context
This part belongs to the 2N603x series of plastic Darlington complementary silicon power transistors manufactured by onsemi. The series includes both PNP (2N6034, 2N6035, 2N6036) and NPN (2N6038, 2N6039) variants, offering a complete solution for push-pull or differential amplifier stages requiring matched characteristics.
Replacement Considerations
The 2N6039 serves as the direct NPN complementary counterpart within the same family. Other generic PNP Darlington transistors may require verification of pin compatibility and electrical parameter matching before substitution.
