2N6038G

2N6038G

$0.31
  • Description:TRANS NPN DARL 60V 4A TO-126
  • Series:-

SKU:ba9e9f48fab1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN DARL 60V 4A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2N6038G

Overview

The onsemi 2N6038G is an NPN plastic Darlington complementary silicon power transistor designed for general-purpose amplifier and low-speed switching applications. It features a maximum collector-emitter voltage of 60 Vdc, a continuous collector current of 4.0 Adc, and a peak collector current of 8.0 Apk. The device offers a total device dissipation of 40 W at a case temperature of 25°C with a thermal resistance junction-to-case of 3.12 °C/W. Operating and storage junction temperatures range from -65 to +150 °C.

Feature Summary

  • High DC current gain ranging from 500 to 15,000 under specified test conditions
  • Robust ESD protection exceeding 400 V via Machine Model and 8000 V via Human Body Model
  • Epoxy casing meets UL 94 V-0 flammability rating

Applications

  • General purpose amplifiers
  • Low-speed switching circuits

Procurement Notes

Verify the specific datasheet revision (e.g., Rev. 15) and package style (Style 1 pinout) against your schematic requirements. Confirm that the TO-225AA physical dimensions align with your PCB footprint and mounting constraints. Ensure compliance with RoHS standards if required by your manufacturing process.

Selection Notes

Select this component when high current gain is necessary without complex biasing networks. Consider the 60 V collector-emitter voltage limit for appropriate circuit headroom. Evaluate the thermal management strategy, as the 40 W dissipation rating requires adequate heat sinking to maintain safe operating temperatures during continuous operation.

Part Context

This part belongs to the 2N603x series of plastic Darlington complementary silicon power transistors manufactured by onsemi. It serves as the NPN counterpart in the complementary pair alongside the PNP 2N6034G. The series is engineered for robust performance in standard industrial and consumer electronic environments requiring reliable power handling.

Replacement Considerations

Direct substitutes within the same voltage class include the 2N6035G. For higher voltage ratings, the 2N6039G provides 80 V capability while maintaining similar current characteristics.

2N6038G2N6038G
$0.31
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