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The onsemi 2N6038G is an NPN plastic Darlington complementary silicon power transistor designed for general-purpose amplifier and low-speed switching applications. It features a maximum collector-emitter voltage of 60 Vdc, a continuous collector current of 4.0 Adc, and a peak collector current of 8.0 Apk. The device offers a total device dissipation of 40 W at a case temperature of 25°C with a thermal resistance junction-to-case of 3.12 °C/W. Operating and storage junction temperatures range from -65 to +150 °C.
Verify the specific datasheet revision (e.g., Rev. 15) and package style (Style 1 pinout) against your schematic requirements. Confirm that the TO-225AA physical dimensions align with your PCB footprint and mounting constraints. Ensure compliance with RoHS standards if required by your manufacturing process.
Select this component when high current gain is necessary without complex biasing networks. Consider the 60 V collector-emitter voltage limit for appropriate circuit headroom. Evaluate the thermal management strategy, as the 40 W dissipation rating requires adequate heat sinking to maintain safe operating temperatures during continuous operation.
This part belongs to the 2N603x series of plastic Darlington complementary silicon power transistors manufactured by onsemi. It serves as the NPN counterpart in the complementary pair alongside the PNP 2N6034G. The series is engineered for robust performance in standard industrial and consumer electronic environments requiring reliable power handling.
Direct substitutes within the same voltage class include the 2N6035G. For higher voltage ratings, the 2N6039G provides 80 V capability while maintaining similar current characteristics.