2N6042

Overview

The onsemi 2N6042 is a silicon NPN power transistor housed in a TO-220AB through-hole package. It features an 8 A maximum collector current and an 80 V collector-emitter breakdown voltage. The device utilizes a Darlington configuration to achieve a minimum DC current gain of 1000. It supports a maximum power dissipation of 2.2 W and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Darlington configuration for high current amplification
• Through-hole TO-220AB mounting style
• Silicon NPN polarity

Applications

• Power switching circuits
• High-gain amplifier stages

Procurement Notes

Verify the manufacturer origin, as multiple vendors produce this part number. Confirm RoHS compliance status and specific datasheet revisions before integration. Ensure the TO-220AB footprint matches the target PCB design. Check for any obsolescence notices or lifecycle changes from the specific supplier.

Selection Notes

Select this component when high current gain is required in a through-hole power application. The 80 V rating limits suitability for higher voltage systems. Compare thermal resistance values against the available heatsinking options to ensure the 2.2 W dissipation limit is not exceeded under operating conditions.

Part Context

This part belongs to the general category of discrete bipolar junction transistors. It is distinct from other 2N60xx series variants which may differ in voltage ratings or packaging. The TO-220AB form factor is standard for manual assembly and prototyping environments requiring robust mechanical connections.