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Product Detailed Parameters
- Description：PNP POWER TRANSISTOR SILICON AMP
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The Microchip Technology 2N6051 is a silicon PNP power bipolar junction transistor designed for high-current applications. It features a maximum collector current of 12 A and a collector-emitter breakdown voltage of 80 V. The device utilizes a TO-3 metal flange mount package, which facilitates efficient thermal dissipation for robust operation. This component is constructed using silicon technology and is housed in a hermetically sealed metal enclosure to ensure reliability under demanding environmental conditions.
Feature Summary
- High current handling capability with a 12 A continuous collector rating
- Robust thermal management via a metal flange mount construction
- Hermetically sealed metal packaging for enhanced environmental protection
Applications
- High-power switching circuits requiring substantial current control
- Industrial motor drive systems utilizing PNP configurations
- Power supply architectures needing reliable high-current regulation
Procurement Notes
Verify the specific manufacturer source, as historical military specifications may be sourced from various qualified producers. Confirm that the TO-3 package variant matches the required pinout and mounting hole configuration for the target application. Ensure compliance with relevant material restrictions if the design requires lead-free or specific alloy standards for the terminal connections.
Selection Notes
Select this component when a high-current PNP transistor is required in a through-hole metal package. The 80 V rating suits moderate voltage applications where higher ratings are unnecessary. Consider the thermal resistance of the TO-3 case when designing heat sinking solutions, as the package relies on direct mounting to a heatsink for optimal performance under full load conditions.
Part Context
This part belongs to the legacy family of high-power silicon transistors originally defined by military standards. The 2N6051 serves as a PNP counterpart to NPN variants like the 2N6059, offering similar current capabilities but with opposite polarity. These devices are typically utilized in rugged environments where hermetic sealing provides superior longevity compared to standard plastic encapsulated alternatives.
