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Product Detailed Parameters
- Description：TRANS PNP 100V 12A TO-3
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：12:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 120mA, 12A
- Current - Collector Cutoff (Max)：1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 6A, 3V
- Power - Max：150 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor 2N6052 PBFREE is a PNP silicon Darlington power transistor housed in a TO-3 case. It features a collector-emitter voltage rating of 100 V and supports a continuous collector current of 12 A with peak currents reaching 20 A. The device provides a minimum DC current gain (hFE) of 750 at 6 A and maintains up to 100 at 12 A. Power dissipation is rated at 150 W, with a thermal resistance from junction to case of 1.17 °C/W. Operating temperatures range from -65 °C to +200 °C.
Feature Summary
- Utilizes epitaxial base process for high-gain amplification and switching applications
- Darlington configuration ensures high current gain across varying load conditions
- Robust TO-3 metal package design facilitates efficient heat dissipation
Applications
- High gain amplifier circuits
- Power switching applications
- Complementary pairing with NPN devices such as the 2N6057 series
Procurement Notes
Verify component authenticity by checking markings against official datasheet specifications. Confirm lead plating options match project requirements, noting that suffixes indicate specific plating types. Ensure thermal management solutions align with the specified junction-to-case thermal resistance to maintain safe operating area limits during operation.
Selection Notes
Select this component when designing circuits requiring high current handling capabilities combined with substantial voltage ratings. The TO-3 package necessitates appropriate mounting hardware and thermal interface materials. Consider the complementary NPN variants if push-pull configurations are required for the application design.
Part Context
This device belongs to the 2N6050 series of PNP silicon Darlington power transistors manufactured by Central Semiconductor Corp. The series includes variants with different voltage ratings, specifically the 2N6050 and 2N6051, offering flexibility for various circuit voltage requirements while maintaining consistent current handling characteristics.
Replacement Considerations
Central Semiconductor has designated the 2N6052 PBFREE as End of Life (EOL). No suggested replacement part numbers are provided in the official Product Discontinuation Notice PDN01250.
