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The onsemi 2N6052 is a PNP Darlington complementary silicon power transistor designed for general-purpose amplifier and low-frequency switching applications. It features monolithic construction with built-in base-emitter shunt resistors. Key electrical ratings include a collector-emitter voltage of 100 Vdc, continuous collector current of 12 Adc, and peak collector current of 20 A. The device supports a total device dissipation of 150 Watts at 25°C case temperature. It offers high DC current gain, typically 3500 at 5.0 Adc, and operates within a junction temperature range of -65 to +200°C.
Verify the specific part number against official datasheets to ensure correct polarity and voltage ratings. Confirm package compatibility with existing thermal management solutions. Check for any updated revision notes that may affect pinout or electrical characteristics. Ensure sourcing from authorized distributors to guarantee component authenticity and traceability.
Select this component for applications requiring high current gain and robust power handling in PNP configurations. Consider the TO-204AA package for through-hole mounting requirements. Evaluate thermal resistance and safe operating area curves for heat dissipation needs. Compare against complementary NPN variants if push-pull topologies are required.
This component belongs to the 2N605x series of Darlington complementary silicon power transistors manufactured by onsemi. The series includes variants with different voltage ratings, such as the 2N6058 and 2N6059. These devices are engineered for reliability in power electronics, offering high current capabilities and stable performance across wide temperature ranges.
Direct substitutes within the same family include the 2N6059, which shares identical 100V collector-emitter voltage ratings and electrical characteristics. Verify pinout and package dimensions when cross-referencing with other manufacturers' equivalents to ensure mechanical fit.