2N6052G

Description：TRANS PNP DARL 100V 12A TO204
Series：-

SKU:87a3c1455818 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP DARL 100V 12A TO204
Series：-
Mfr：onsemi
Package：Tray
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：12:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：3V @ 120mA, 12A
Current - Collector Cutoff (Max)：1mA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 6A, 3V
Power - Max：150 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-204 (TO-3)
Grade：-
Qualification：-

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2N6052G

Overview

The onsemi 2N6052G is a silicon PNP Darlington power transistor housed in a TO-3 package. It features a maximum collector current of 12A and a collector-emitter voltage rating of 100V. The device offers a minimum DC current gain (hFE) of 750 at 6A and 3V, with a typical value of 3500 at 100mA. Maximum power dissipation is 150W, and the junction-to-case thermal resistance is 1.17°C/W. Operating temperature ranges from -65°C to 200°C.

Feature Summary

Darlington configuration providing high DC current gain for efficient amplification
Designed for general-purpose amplifier and low-frequency switching applications
Robust construction suitable for high-power handling requirements

Applications

General-purpose linear amplifiers
Low-frequency switching circuits
Power regulation systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revisions and specific lot codes upon receipt. Ensure proper handling procedures are followed due to the sensitive nature of semiconductor devices. Cross-reference part numbers carefully to avoid substitution errors with obsolete or similar variants.

Selection Notes

Select this component for applications requiring high current gain and moderate voltage ratings. Consider thermal management solutions given the 150W power dissipation capability. Evaluate alternative parts if lower current requirements exist or if different packaging formats are necessary for the target assembly.

Part Context

The 2N6052G belongs to the family of silicon PNP power transistors manufactured by onsemi. It utilizes a TO-3 metal case package designed for high-power thermal performance. This component serves as a discrete solution for power control tasks where high gain and reliability are critical.

Replacement Considerations

The 2N6052G is listed as obsolete. The MJ11015G is identified as a similar available substitute. Verify electrical compatibility and pinout alignment before implementation.