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Product Detailed Parameters
- Description：PNP POWER TRANSISTOR SILICON AMP
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The Microchip Technology 2N6058 is a silicon NPN power transistor housed in a TO-3 package. It features a Darlington configuration designed for high current and high dissipation applications. Key electrical ratings include a collector-emitter voltage of 80 V, a collector-base voltage of 80 V, and a continuous collector current of 12 A. The device supports a total power dissipation of 60 W at case temperature of 25°C. It operates within a junction temperature range of -65°C to +200°C and offers a minimum DC current gain (hFE) of 100.
Feature Summary
- Darlington configuration providing high current gain
- High current and high dissipation capability
- Epitaxial base process construction
Applications
- Power linear amplifier circuits
- Low frequency switching applications
Procurement Notes
Verify the manufacturer source carefully, as Central Semiconductor also produces this part number with identical specifications. Confirm the specific datasheet version and marking details required for your design. Ensure the TO-3 package insulation requirements match your thermal management strategy. Check for any specific environmental compliance documentation if needed for your region.
Selection Notes
Select this component when a high-gain NPN power stage is required in a through-hole TO-3 package. The 80 V rating suits moderate voltage power supplies. Consider the 60 W dissipation limit and ensure adequate heatsinking. The complementary 2N6057 PNP variant is available for push-pull configurations.
Part Context
This transistor belongs to a series of complementary silicon Darlington power transistors manufactured using an epitaxial base process. The series includes both NPN and PNP variants designed for robust performance in demanding power electronics environments. The TO-3 metal can package provides excellent thermal conductivity for high-power operations.
Replacement Considerations
The 2N6059 is a similar NPN power transistor in the same family but rated for 100 V instead of 80 V. Verify that the higher voltage rating does not conflict with circuit constraints. The 2N5883 and 2N5884 are listed as complements in some documentation, though specific pinouts and ratings should be cross-referenced.
