2N6078

Overview

The Microchip Technology 2N6078 is a high-voltage, high-power silicon NPN transistor designed for demanding switching applications. It features a multi-epitaxial construction housed in a TO-66 through-hole package. Key electrical parameters include a maximum collector-base voltage (Vbr CBO) of 275 V and a maximum collector-emitter voltage (Vbr CEO) of 275 V. The device supports a maximum power dissipation of 25 W and exhibits a maximum fall time of 750 ns. These specifications make it suitable for use in sweep circuits and active voltage clamp configurations where robust high-voltage performance is required.

Feature Summary

• High-voltage capability with 275 V breakdown ratings for collector-base and collector-emitter junctions
• Multi-epitaxial silicon NPN construction optimized for high-power switching operations
• TO-66 metal can package providing mechanical stability and thermal management for through-hole mounting

Applications

• Sweep circuits in display or measurement equipment
• Active voltage clamp circuits requiring fast switching response
• High-voltage power switching applications within specified thermal limits

Procurement Notes

Verify the manufacturer origin carefully, as the 2N6078 designation is historically associated with multiple vendors including Seme LAB and New Jersey Semi-Conductor Products. Confirm that the specific batch supplied by Microchip Technology matches the required datasheet revisions and pinout compatibility. Request detailed test reports to ensure compliance with the 275 V breakdown and 25 W power dissipation specifications before integration into critical designs.

Selection Notes

Select this component when designing circuits requiring high-voltage NPN switching with moderate current capabilities. Ensure the application environment allows for adequate heat sinking to manage the 25 W power dissipation rating. Verify that the required switching speed meets the 750 ns fall time specification. Consider the TO-66 package constraints regarding board space and mounting orientation during the layout phase.

Part Context

The 2N6078 belongs to a family of high-voltage NPN power transistors often used in industrial and consumer electronics. While the part number is standardized, manufacturing sources vary significantly across the industry. Microchip Technology's version adheres to the standard electrical characteristics defined for this type, ensuring interoperability with legacy designs originally developed using components from other manufacturers like Motorola or Central Semiconductor.

Replacement Considerations

Direct substitutes include the 2N6077 and 2N6079, which share similar high-voltage NPN characteristics but may differ in specific gain or frequency parameters. Other equivalent parts from different manufacturers must be verified against the 275 V breakdown and 25 W power dissipation limits. Always cross-reference the replacement datasheet to confirm pinout compatibility and thermal resistance values.