ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 2A SOT223
- Series：*
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：44W (Tc)
- Operating Temperature：-55°C ~ 155°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223-4
- Package / Case：TO-261-4, TO-261AA
Download product information
Overview
The UMW 2N60G is a high-voltage N-channel power MOSFET designed for robust performance in demanding switching applications. It features a drain-source voltage rating of 600 V and a continuous drain current capability of 2 A. The device exhibits an on-state resistance of 5 Ω at a gate-source voltage of 10 V, ensuring efficient conduction. Key electrical characteristics include an ultra-low typical gate charge of 9.0 nC and a low reverse transfer capacitance of 5.0 pF. These parameters support fast switching capabilities and reduced switching losses. The component is engineered with high rugged avalanche characteristics and improved dv/dt capability, making it suitable for reliable operation in various power electronics circuits.
Feature Summary
- Ultra-low gate charge for enhanced switching efficiency
- High ruggedness with specified avalanche energy capability
- Improved dv/dt capability for stable high-speed operation
Applications
- High speed switching applications in power supplies
- PWM motor controls
- High efficient DC to DC converters
- Bridge circuits
Procurement Notes
Verify the specific package variant (TO-220, TO-220F, TO-251, or TO-252) as the base part number may correspond to multiple physical configurations. Confirm lead-free plating status if required by assembly specifications. Ensure compatibility with standard through-hole mounting processes for the selected package type. Cross-reference the manufacturer's latest datasheet for absolute maximum ratings to prevent overstress during design integration.
Selection Notes
Select this component for designs requiring moderate current handling with high voltage isolation. The 5 Ω on-resistance is suitable for lower current applications where cost-effective switching is prioritized over minimal conduction loss. Consider the thermal management requirements associated with the chosen package style. Evaluate the gate drive circuitry to leverage the low gate charge for optimal switching speed without excessive driver current demands.
Part Context
This device belongs to the 2N60 series of N-channel power MOSFETs manufactured by Unisonic Technologies. The series is characterized by high voltage ratings and optimized switching performance. The 2N60G specifically denotes a variant within this lineup, distinguished by its 5 Ω on-state resistance specification. It shares common architectural features with other members of the family, focusing on reliability and ease of integration into standard power conversion topologies.
Replacement Considerations
Direct substitutes include the 2N60L-TM3-T and 2N60L-TA3-T from the same manufacturer, which offer identical electrical characteristics with different packaging options such as TO-251 and TO-220 respectively. When replacing, ensure the pinout configuration matches the existing board layout, particularly regarding gate, drain, and source assignments.
