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The Central Semiconductor Corp 2N6107 PBFREE is a PNP silicon power transistor manufactured using an epitaxial base process. It features a TO-220AB package with a collector tab for thermal management. Key electrical ratings include a continuous collector current of 7.0 A, a collector-emitter voltage of 70 V, and a maximum power dissipation of 40 W at 25°C case temperature. The device exhibits a minimum DC current gain (hFE) of 30 at 2.0 A collector current and a transition frequency of 4.0 MHz.
Verify End-of-Life status prior to procurement as indicated by official notices. Confirm plating specifications match design requirements; the PBFREE suffix denotes lead-free plating. Ensure sourcing channels can support discontinued component availability or provide valid alternative sources if inventory is depleted.
Select this component for designs requiring a 70V PNP power transistor with 7A current handling capability. Verify that the thermal resistance of 3.13 °C/W aligns with the system's heat sinking strategy. Consider the complementary NPN counterpart for balanced bridge topologies. Validate operating junction temperatures against the specified -65 to +150 °C range.
This device belongs to a family of complementary silicon power transistors including the 2N6288 series. It shares mechanical dimensions and pinout configurations with similar TO-220 power devices. The product line targets industrial and commercial equipment requiring robust discrete power switching solutions.
Official documentation lists no suggested replacement part numbers for the 2N6107. Users are advised to contact manufacturer support for alternate source identification.