2N6109 PBFREE

Description：TRANS PNP 50V 7A TO-220-3
Series：-

SKU:b173d1bc2049 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 50V 7A TO-220-3
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：7:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：3.5V @ 3A, 7A
Current - Collector Cutoff (Max)：1mA
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 2.5A, 4V
Power - Max：40 W
Frequency - Transition：4MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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2N6109 PBFREE

Overview

The Central Semiconductor Corp. 2N6109 PBFREE is a PNP silicon power transistor manufactured using an epitaxial base process. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 7.0 A. The device supports a peak collector current of 10 A and dissipates up to 40 W at a case temperature of 25°C. It operates within a junction temperature range of -65°C to +150°C, with a thermal resistance (θJC) of 3.13 °C/W. The component utilizes a TO-220AB package.

Feature Summary

Epitaxial base construction for robust power handling
Designed for general-purpose power amplifier applications
Optimized for high-speed switching operations

Applications

General purpose power amplification circuits
High-speed switching applications
Complementary pairs with NPN counterparts in push-pull configurations

Procurement Notes

Verify the specific plating configuration upon ordering, as the standard designation allows for either lead-free or tin/lead plated products depending on availability. Explicitly request the "PBFREE" suffix to ensure compliance with lead-free material specifications. Confirm current stock status as this component has been transitioned to End of Life status by the manufacturer.

Selection Notes

Select this component when a PNP power transistor with a 50 V collector-emitter rating and 7 A continuous current capacity is required. Ensure the application design accommodates the 40 W power dissipation limit and the 3.13 °C/W thermal resistance characteristics. Verify that the TO-220AB flange mount package fits the mechanical constraints of the target system.

Part Context

This part belongs to a complementary series of silicon power transistors designed for demanding power electronics environments. It serves as the PNP counterpart to the NPN 2N6290, allowing for matched performance in symmetrical circuit topologies. The series is engineered to provide reliable operation across a wide temperature range for industrial and commercial power management tasks.