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The onsemi 2N6109 is a single-element PNP silicon power bipolar transistor housed in a TO-220AB flange mount package. It supports a maximum collector current of 7 A and a collector-emitter voltage of 50 V. The device features a maximum collector-base voltage of 60 V, an emitter-base voltage of 5 V, and a maximum power dissipation of 40 W. It operates up to a junction temperature of 150 °C with a maximum switching frequency of 1 MHz.
Verify the specific manufacturer designation when sourcing, as Harris originally produced this part before onsemi acquired relevant assets. Confirm that the component matches the standard 2N6109 electrical specifications rather than variant suffixes which may indicate different testing or packaging standards. Ensure the TO-220AB physical dimensions align with your thermal design requirements.
Select this component for designs requiring a PNP power transistor with moderate voltage ratings and high current handling capabilities. The TO-220AB package facilitates direct mounting to heat sinks for efficient thermal dissipation during continuous operation. Consider its complementary relationship with NPN devices like the 2N6288 when designing push-pull output stages or balanced amplifier configurations.
This transistor belongs to a family of general-purpose power bipolar devices historically manufactured by Harris Semiconductor. Following corporate acquisitions, production rights transferred to onsemi. The 2N6109 serves as a standard replacement for legacy designs requiring a 50V PNP power switch, maintaining compatibility with established circuit topologies used in industrial and consumer electronics.
The 2N6288 is documented as the complementary NPN counterpart in official specifications. Verify pinout compatibility and thermal resistance values when substituting with other PNP transistors in the same voltage and current class.