2N6126

Overview

The Harris Corporation 2N6126 is a single-element PNP silicon power bipolar transistor housed in a TO-220AB plastic/epoxy flange mount package. It features three through-hole terminals with the case connected to the collector. The device supports a maximum collector current of 4 A and a collector-emitter breakdown voltage of 60 V. It has a minimum DC current gain (hFE) of 10, a maximum power dissipation of 40 W, and an operating temperature range up to 150 °C.

Feature Summary

• PNP polarity configuration for switching applications
• Flange mount construction with collector-connected case
• Silicon-based single-element design

Applications

• Switching circuits
• Medium power linear applications

Procurement Notes

Verify the manufacturer origin as the original Harris Semiconductor assets were acquired by ON Semiconductor. Confirm the specific datasheet version matches the required hFE binning and thermal characteristics. Ensure the TO-220AB package dimensions align with the target heatsink interface. Check for RoHS compliance status if required by the final assembly specifications.

Selection Notes

Select this component for designs requiring a PNP power switch with moderate current handling capabilities. The TO-220AB package facilitates direct mounting to external heat sinks for effective thermal management. Verify that the 60 V collector-emitter voltage rating exceeds the peak circuit voltages. Ensure the base drive current can achieve the specified minimum hFE of 10 for proper saturation.

Part Context

This part belongs to the 2N612x series of medium-power transistors manufactured by Harris Semiconductor. The series includes complementary NPN and PNP variants such as the 2N6122 and 2N6125. These devices are designed for general-purpose power switching and linear regulation tasks in industrial and consumer electronics.

Replacement Considerations

• 2N6125