2N6193QFN

Overview

The Microchip Technology 2N6193QFN is a PNP bipolar junction transistor designed for through-hole mounting in the TO-39 (TO-205AD) metal can package. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 5A. The device has a total power dissipation capacity of 1W. It operates within a temperature range of -65°C to 200°C, providing robust performance for high-power switching applications.

Feature Summary

• High current handling capability with a 5A continuous collector current rating
• Robust thermal operation supporting junction temperatures up to 200°C
• Durable metal can construction in the standard TO-39 through-hole package

Applications

• Power supply circuits requiring PNP switching
• High-current load driving applications
• General-purpose power transistor switching

Procurement Notes

Verify the manufacturer part number matches Microchip Technology's official designation. Confirm the package type is TO-39 (TO-205AD) and that the component is a PNP BJT. Ensure the electrical ratings align with your circuit requirements before procurement.

Selection Notes

Select this component when a through-hole PNP transistor with 100V blocking voltage and 5A current capacity is required. Consider the TO-39 metal can package for its mechanical stability and thermal properties in high-power environments compared to smaller surface-mount alternatives.

Part Context

This component belongs to the family of general-purpose power bipolar transistors. It serves as a discrete semiconductor switch or amplifier element. The TO-39 package provides a standardized footprint for legacy and industrial designs requiring reliable through-hole integration.

Replacement Considerations

Cross-reference with other manufacturers offering equivalent PNP transistors in the TO-39 package with matching 100V/5A/1W specifications. Verify pinout compatibility and thermal characteristics before substitution.