2N6211P

Overview

The 2N6211P is a PNP power bipolar junction transistor manufactured by Microchip Technology. It features a collector-emitter voltage (VCEO) of 225 V and a collector-base voltage (VCBO) of 275 V, with an emitter-base voltage (VEBO) rating of 6 V. The device supports a maximum DC collector current of 2 A and dissipates up to 3 W of power. It operates within a temperature range extending to +200°C and utilizes silicon technology in a TO-66-2 through-hole package.

Feature Summary

• High-voltage capability with 225 V collector-emitter breakdown
• Robust thermal performance supporting operation up to +200°C
• High current handling capacity rated at 2 A maximum DC collector current

Applications

• High-voltage switching circuits
• Power amplifier stages
• Industrial control systems requiring high thermal stability

Procurement Notes

Verify the specific suffix 'P' against official Microchip documentation to confirm pinout and mechanical dimensions for the TO-66-2 package. Ensure design compliance with the 225 V VCEO and 2 A Ic limits. Confirm RoHS status details as indicated in manufacturer specifications before integration.

Selection Notes

Select this component for applications demanding high voltage isolation and elevated temperature operation. The TO-66-2 package suits through-hole mounting requirements. Evaluate thermal management needs given the 3 W dissipation limit and +200°C maximum operating temperature specification.

Part Context

This part belongs to the Microchip Technology discrete semiconductor portfolio, specifically within the Bipolar Junction Transistors (BJT) category. It represents a legacy high-power silicon device designed for robust industrial and military-grade environments where high voltage and thermal resilience are critical design parameters.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements must match the 225 V VCEO, 2 A Ic, and TO-66-2 form factor.