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The Microchip Technology 2N6226 is a silicon PNP power bipolar junction transistor designed for high-current switching applications. It features a maximum collector current of 50 A and a collector-emitter breakdown voltage of 100 V. The device supports a maximum power dissipation of 125 W to 150 W, depending on the specific manufacturer datasheet. It utilizes a through-hole mounting type, typically in TO-3 or TO-204AA packages, ensuring robust thermal performance for industrial and automotive power control systems.
Verify the specific package variant (TO-3 or TO-204AA) and absolute maximum ratings against the official Microchip Technology datasheet prior to procurement. Ensure thermal resistance requirements are met for the intended application environment. Confirm that the supplier provides documentation matching the exact part number to avoid compatibility issues with existing circuit designs.
Select this component when designing circuits requiring high PNP current switching at moderate voltages. Consider the thermal dissipation capabilities and package size constraints. Compare alternative PNP transistors with similar current and voltage ratings if space or cost optimization is required. Ensure the base drive current can support the specified 50 A collector current operation.
The 2N6226 belongs to the family of silicon PNP power transistors manufactured by Microchip Technology. It serves as a discrete semiconductor device for power electronics. The part is distinct from other series like the L6226 motor controller or 2N6236 SCR. It is specifically engineered for linear and switching modes in high-power environments.
Public confirmed substitute part numbers are not available in the provided source material. Consult official Microchip Technology cross-reference guides for verified equivalents.