2N6230

$32.67

Description：PNP POWER TRANSISTOR SILICON AMP
Series：*

SKU:0223346717a3 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：PNP POWER TRANSISTOR SILICON AMP
Series：*
Mfr：Microchip Technology
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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2N6230

Overview

The 2N6230 is a silicon power transistor manufactured by Central Semiconductor, not Microchip Technology. It is housed in a TO-3 flange mount package with a metal body. The device supports a maximum collector-emitter voltage of 120 V and a continuous collector current of 10 A. It operates within a temperature range of -65 °C to +200 °C. The component has two terminals and is classified as a single configuration transistor.

Feature Summary

Constructed from silicon material for robust power handling capabilities.
Features a flange mount package design suitable for direct heatsink attachment.
Includes an uncommitted comparator with open-drain output capability.

Applications

High-power switching circuits requiring robust thermal management
Industrial motor control systems utilizing field mount configurations
Power amplification stages operating at elevated temperatures

Procurement Notes

Verify the manufacturer designation carefully, as official documentation identifies Central Semiconductor as the producer rather than Microchip Technology. Confirm the RoHS compliance status, which is listed as non-compliant in available records. Ensure the TO-3 flange mount package matches your thermal and mechanical requirements before procurement.

Selection Notes

Select this component when high collector current capacity and wide operating temperature ranges are required. The TO-3 package facilitates efficient heat dissipation through direct mounting. Verify that the 120 V breakdown voltage aligns with your circuit's peak voltage demands. Consider the non-RoHS status if environmental regulations apply to your specific application environment.

Part Context

This component belongs to the category of discrete semiconductor devices, specifically silicon power transistors. It is distinct from Microchip Technology's typical portfolio of microcontrollers and interface ICs. The device utilizes BCD or similar bipolar technology processes common for high-voltage power applications. Its classification falls under general-purpose power switching components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other TO-3 silicon power transistors offering comparable 10 A current ratings and 120 V voltage specifications. Ensure any replacement maintains the same pinout configuration and thermal resistance characteristics.