2N6235

Overview

The Microchip Technology 2N6235 is a high-voltage NPN bipolar junction transistor housed in a hermetically sealed TO-66 metal package. It features a collector-emitter voltage rating of 300V and a continuous collector current capacity of 5A. The device supports a maximum power dissipation of 50W, making it suitable for robust power applications requiring reliable performance under demanding electrical conditions.

Feature Summary

• Hermetically sealed construction in a TO-66 metal package for environmental protection
• High voltage capability with a 300V collector-emitter rating
• Designed for high-power applications with 50W dissipation capacity

Applications

• High voltage switching circuits
• Power amplifier stages
• Industrial control systems

Procurement Notes

Verify the manufacturer source carefully, as conflicting datasheets exist indicating different manufacturers such as Motorola or Semelab for similar part numbers. Confirm the specific revision and testing standards required for your application to ensure compatibility with system specifications.

Selection Notes

Select this component when a hermetically sealed NPN transistor with high voltage ratings is required. Ensure the thermal management design accommodates the 50W power dissipation limit. Verify that the TO-66 package dimensions fit the available board space and mounting requirements.

Part Context

This component belongs to the family of high-reliability bipolar transistors designed for military and industrial environments. The TO-66 package provides superior thermal conductivity and environmental sealing compared to standard plastic packages, ensuring long-term stability in harsh conditions.

Replacement Considerations

Check for direct substitutes from other manufacturers offering identical pinouts and electrical characteristics. Ensure any replacement maintains the hermetic seal requirement if specified by the original design constraints.