2N6251

2N6251

  • Description:TRANS NPN 350V 10A TO204AA
  • Series:-

SKU:52135c94544e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 350V 10A TO204AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 1.67A, 10A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:6 @ 10A, 3V
  • Power - Max:6 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-204AA (TO-3)

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2N6251

Overview

The Microchip Technology 2N6251 is a high-voltage NPN silicon power bipolar transistor designed for demanding electronic applications. It features a maximum collector current of 10 A and a collector-emitter breakdown voltage of 350 V. The device is housed in a TO-3 metal flange mount package with two pins, facilitating efficient heat dissipation. Qualified per MIL-PRF-19500/510, it supports single-element configurations with a minimum DC current gain of 6. The component exhibits a maximum collector capacitance of 500 pF and connects the case to the collector terminal.

Feature Summary

  • High-voltage NPN silicon construction optimized for robust power handling
  • TO-3 metal flange mount package ensuring effective thermal management
  • MIL-PRF-19500/510 qualification for reliability in critical environments

Applications

  • High voltage inverters
  • Switching regulators
  • Line operated amplifier applications

Procurement Notes

Verify that the specific ordering suffix matches the required military screening level (JAN, JANTX, or JANTXV) as defined by MIL-PRF-19500/510. Confirm lead times and availability directly with authorized distributors, as this component may be subject to long-lead constraints. Ensure the procurement documentation explicitly states the device meets the absolute maximum ratings and electrical characteristics specified in the official datasheet to guarantee performance integrity.

Selection Notes

Select the 2N6251 when circuit designs require high voltage blocking capabilities combined with significant current handling in a ruggedized form factor. The TO-3 package is suitable for chassis-mounted applications where thermal resistance is a primary design constraint. Consider the minimum hFE of 6 when designing base drive circuits to ensure adequate saturation or amplification margins under worst-case conditions.

Part Context

The 2N6251 belongs to a family of high-voltage NPN power transistors originally developed for military and aerospace standards. It shares structural similarities with related part numbers such as the 2N6249 and 2N6250, which offer varying voltage and current specifications within the same qualified series. These devices are engineered to provide reliable switching and amplification in harsh operational environments requiring strict adherence to performance criteria.

Replacement Considerations

Direct substitutes include the 2N6249 and 2N6250 from the same manufacturer's qualified lineup. Verify that alternative parts meet the specific voltage and current requirements of the original design. Cross-referencing with other manufacturers' equivalents requires careful validation of pinout compatibility and thermal characteristics.

2N62512N6251

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