2N6284G

$5.81

Description：TRANS NPN DARL 100V 20A TO204
Series：-

SKU:5164b54fdd73 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 100V 20A TO204
Series：-
Mfr：onsemi
Package：Tray
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：20 A
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：3V @ 200mA, 20A
Current - Collector Cutoff (Max)：1mA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 10A, 3V
Power - Max：160 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-204 (TO-3)
Grade：-
Qualification：-

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2N6284G

Overview

The onsemi 2N6284G is a monolithic NPN silicon Darlington power transistor housed in a TO-204AA (TO-3) metal package. It features a maximum collector-emitter voltage of 100 Vdc and continuous collector current of 20 Adc. The device offers high DC current gain, with a minimum of 750 at 10 Adc and 100 at 20 Adc. Total power dissipation reaches 160 W at 25°C case temperature. Operating junction temperatures range from -65°C to +200°C.

Feature Summary

Monolithic construction incorporating built-in base-emitter shunt resistors for stability
Rugged reverse-bias second-breakover area (RBSOA) characteristics
High DC current gain suitable for general-purpose amplifier applications
Lead-free packaging compliant with environmental standards

Applications

General-purpose amplifier circuits
Low-frequency switching motor control
Power regulation systems requiring high current handling

Procurement Notes

Verify the specific ordering suffix 'G' confirms lead-free status as defined by the manufacturer's soldering reference manual. Confirm the package style matches the required pin configuration for your circuit board layout. Ensure thermal management solutions account for the specified derating curve above 25°C case temperature to maintain reliability within the rated power dissipation limits.

Selection Notes

Select this component when high current gain and robust second-breakdown performance are required for low-speed switching or amplification. Compare against complementary PNP variants like the 2N6287 if push-pull configurations are needed. Evaluate thermal resistance requirements based on the application's case temperature constraints and duty cycle specifications.

Part Context

This part belongs to the 2N6284 series of complementary silicon power transistors manufactured by onsemi. It is designed alongside PNP counterparts such as the 2N6286 and 2N6287 to facilitate balanced circuit designs. The series utilizes a rugged monolithic construction to handle significant power dissipation in standard through-hole metal packages.