2N6285

2N6285

$58.30
  • Description:TRANS PNP DARL 60V 20A DIE
  • Series:-

SKU:70ee09b37445 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP DARL 60V 20A DIE
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):20 A
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 200mA, 20A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 10A, 3V
  • Power - Max:160 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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2N6285

Overview

The onsemi 2N6285 is a high-power NPN bipolar junction transistor belonging to the 2N6284 series. It utilizes a Darlington configuration housed in a TO-204-2 (TO-3) through-hole package. The device supports a maximum collector-emitter voltage of 100 V and a continuous DC collector current of 20 A. Power dissipation reaches 160 W, with an operating temperature range from -65 °C to +150 °C. Minimum DC current gain ranges from 100 to 750.

Feature Summary

  • High power handling capability suitable for demanding industrial applications
  • Darlington configuration provides substantial current amplification
  • Robust thermal management via metal tab mounting

Applications

  • Industrial motor control systems
  • Power supply output stages
  • High-current switching circuits

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi before procurement. Confirm that the TO-3 package dimensions match your existing board layout or heatsink interface requirements. Ensure proper isolation techniques are implemented during installation due to the exposed metal case connection.

Selection Notes

Select this component when high current gain and robust power handling are required in a through-hole format. Consider the thermal resistance characteristics and ensure adequate heatsinking is available to maintain junction temperatures within safe limits under full load conditions.

Part Context

This part belongs to the 2N6284 series of high-power NPN transistors manufactured by onsemi. These devices are designed for general-purpose high-power switching and amplification applications requiring reliable performance in harsh environments.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Verify pinout compatibility and electrical ratings before substituting.

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