SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N6285 is a high-power NPN bipolar junction transistor belonging to the 2N6284 series. It utilizes a Darlington configuration housed in a TO-204-2 (TO-3) through-hole package. The device supports a maximum collector-emitter voltage of 100 V and a continuous DC collector current of 20 A. Power dissipation reaches 160 W, with an operating temperature range from -65 °C to +150 °C. Minimum DC current gain ranges from 100 to 750.
Verify the specific datasheet revision and RoHS compliance status directly with onsemi before procurement. Confirm that the TO-3 package dimensions match your existing board layout or heatsink interface requirements. Ensure proper isolation techniques are implemented during installation due to the exposed metal case connection.
Select this component when high current gain and robust power handling are required in a through-hole format. Consider the thermal resistance characteristics and ensure adequate heatsinking is available to maintain junction temperatures within safe limits under full load conditions.
This part belongs to the 2N6284 series of high-power NPN transistors manufactured by onsemi. These devices are designed for general-purpose high-power switching and amplification applications requiring reliable performance in harsh environments.
Consult official cross-reference lists for verified substitutes. Verify pinout compatibility and electrical ratings before substituting.