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The Microchip Technology 2N6286 is a PNP Darlington power bipolar junction transistor designed for general-purpose amplifier and low-frequency switching applications. It features an 80V collector-emitter voltage rating, a maximum continuous collector current of 20A, and a total power dissipation capacity of 175W. The device offers a minimum DC current gain (hFE) of 1500 at 1A and 3V, with a collector cutoff current of 1mA. Operating within a temperature range of -65°C to 175°C TJ, it utilizes a TO-3 through-hole package.
Verify the specific ordering suffix against the official datasheet to ensure correct electrical characteristics and packaging options. Confirm RoHS compliance status as variations exist between standard and military-grade variants. Check lead times for production quantities as manufacturing cycles may extend significantly beyond immediate stock availability.
Select this component when high current gain and substantial power dissipation are required in a PNP configuration. Ensure the application voltage does not exceed the 80V limit. Consider thermal management requirements due to the 175W power rating and TO-3 package constraints. Validate that the switching frequency aligns with the device's low-frequency design specifications.
The 2N6286 belongs to the family of complementary silicon power transistors, often paired with NPN counterparts like the 2N6284. Manufactured by Microchip Technology, it serves as a legacy replacement for earlier designs from Motorola and RCA. The TO-3 metal case provides superior heat dissipation compared to plastic packages, supporting its use in high-power analog and digital circuits.
Direct substitutes include the ON Semiconductor 2N6286 and historical equivalents from Motorola or RCA. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' versions of the same JEDEC part number.