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The onsemi 2N6287WP is a PNP silicon power Darlington transistor housed in the TO-3 metal can package. It serves as the complementary device to the NPN 2N6284, designed for general-purpose amplifier and low-speed switching motor control applications. The component features rugged Reverse Biased Safe Operating Area (RBSOA) characteristics and monolithic construction with a built-in collector-emitter diode. Key electrical ratings include a maximum collector-emitter voltage of 100 V, a continuous collector current of 20 A, and a total power dissipation of 160 W.
Verify the specific suffix 'WP' against official onsemi documentation to confirm exact mechanical or environmental specifications, as standard listings often reference the base 2N6287P. Ensure the procurement source provides valid RoHS compliance data and confirms the TO-3 flange mount package type. Cross-reference datasheet revisions to guarantee compatibility with existing thermal management designs.
Select this component when a high-gain PNP power switch is required to complement an NPN Darlington stage. The TO-3 package offers robust thermal performance for high-power dissipation scenarios. Consider the 100 V voltage rating and 20 A current capacity for appropriate load matching. Verify that the application does not require surface-mount technology, as this device is strictly through-hole.
This part belongs to the 2N6284/2N6287 complementary pair family from onsemi. These transistors are established solutions for bipolar power applications requiring high DC current gain. The series is widely recognized for its reliability in industrial and automotive environments where ruggedness and stable amplification are critical.
Direct substitutes include the MJH6287 and generic equivalents such as those from STMicroelectronics or Inchange Semiconductor. Verify pinout compatibility and thermal resistance values before substitution.