2N6295 TIN/LEAD

Overview

The 2N6295 TIN/LEAD is a silicon NPN power bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-66-2 through-hole package designed for high-reliability applications. The device supports a maximum DC collector current of 8 A and a continuous collector current of 4 A. Key voltage ratings include a collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation capability reaches 50 W, with a saturation voltage of 3 V. The component operates within a temperature range of -65°C to +200°C and features a minimum DC current gain (hFE) of 750, extending up to 18,000.

Feature Summary

• High current handling capability suitable for power switching applications
• Extended thermal stability allowing operation at elevated temperatures up to 200°C
• Very high DC current gain for efficient base drive requirements
• Robust construction in a hermetically sealed metal TO-66 package

Applications

• High-power linear regulation circuits
• Industrial motor control systems
• Military and aerospace power supplies
• High-voltage switching stages

Procurement Notes

Verify the specific tin/lead plating configuration against project specifications to ensure compatibility with legacy assembly processes. Confirm that the TO-66-2 package dimensions align with existing board layouts and heatsinking infrastructure. Request the latest datasheet revision to check for any parameter updates or manufacturing changes. Ensure compliance with relevant environmental directives if applicable to the final product deployment.

Selection Notes

Select this component when high current capacity and wide operating temperature ranges are required. The TO-66 package offers superior thermal performance compared to plastic alternatives. Consider the high current gain for low-drive applications. Evaluate the 80 V rating against circuit peak voltages to ensure adequate safety margins. Verify that the 50 W power dissipation rating meets the thermal design constraints of the enclosure.

Part Context

This part belongs to the standard NPN power transistor category from Central Semiconductor. It serves as a high-performance alternative to general-purpose transistors in demanding environments. The tin/lead finish indicates suitability for specific soldering processes or military standards requiring non-rohs materials. It complements other high-power devices in the manufacturer's portfolio for robust electronic system designs.

Replacement Considerations

Cross-reference pinouts and thermal characteristics carefully. Verify that substitute parts meet the 8 A current and 50 W power dissipation requirements. Ensure the replacement maintains the TO-66 form factor or provides a compatible footprint adapter.