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Product Detailed Parameters
- Description：4A 80V TH TRANSISTOR-BIPOLAR POW
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 40mA, 4A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：50 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6297 PBFREE is a PNP complementary silicon Darlington power transistor. It features an 80 V collector-base voltage (VCBO) and an 80 V collector-emitter voltage (VCEO). The device has a maximum power dissipation of 50 W and a gain bandwidth product of 4 MHz. Operating temperatures range from -65°C to +200°C. The base-emitter on voltage is 2.8 V, with a saturation voltage of 4 V. Collector-emitter saturation voltage is specified at 3 V. The component utilizes a TO-66 case type.
Feature Summary
- Complementary silicon Darlington power transistor configuration
- High temperature operation capability up to 200°C
- Robust 50 W power dissipation rating
Applications
- Power switching applications requiring high current gain
- Complementary amplifier circuits in industrial equipment
- High-temperature electronic systems
Procurement Notes
Verify the specific manufacturer datasheet for the 2N6297 PBFREE to confirm exact electrical tolerances and thermal characteristics. Ensure that the TO-66 package dimensions match the target PCB layout requirements. Cross-reference the lead-free designation with assembly specifications to guarantee compliance with environmental standards for the intended manufacturing process.
Selection Notes
Select this component when a PNP Darlington transistor with high voltage ratings and significant power handling is required. The 80 V limits suit moderate voltage environments. Consider the TO-66 package for its thermal performance and mechanical robustness. Evaluate the 4 MHz bandwidth against signal frequency needs to ensure adequate response speed for the specific application dynamics.
Part Context
This part belongs to the Central Semiconductor complementary silicon Darlington power transistor series. It serves as the PNP counterpart in these matched pairs. The series is designed for demanding power electronics applications where high reliability and thermal stability are critical operational factors.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Generic replacements may not match the specific VCBO or power dissipation ratings.
