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The Central Semiconductor Corp 2N6299 TIN/LEAD is a silicon PNP power bipolar junction transistor (BJT) designed for high-current applications. It features a maximum collector current of 16 A and a collector-emitter breakdown voltage of 80 V. The device is housed in a TO-3P hermetic metal package, providing robust thermal management with a power dissipation rating of 75 W. It operates within a temperature range from -65 °C to +175 °C, ensuring reliability in demanding environments.
Verify the specific ordering suffix 'TIN/LEAD' to confirm lead material composition and compliance status. Ensure the TO-3P package dimensions match the target board layout. Confirm that the manufacturer documentation aligns with the required electrical characteristics for the intended circuit design before finalizing procurement.
Select this component when high current capacity and hermetic sealing are required. Compare the 80 V rating against peak circuit voltages to ensure adequate margin. Consider the thermal resistance of the TO-3P package for heat sink selection. Evaluate alternative packages if surface mount technology is preferred over through-hole mounting.
This part belongs to the broader category of PNP power transistors manufactured by Central Semiconductor. It shares the 16 A current class with other variants but differs in voltage ratings and package styles. The TO-3P form factor distinguishes it from plastic-packaged equivalents, offering superior durability for specialized applications.
Cross-reference with MJL21195 or similar high-power PNP transistors for potential substitution. Verify pinout compatibility and thermal performance metrics before replacing. Ensure the replacement device meets the same hermetic requirements if environmental sealing is critical.