2N6299

2N6299

$22.63
  • Description:TRANS PNP DARL 80V 8A TO66
  • Series:-

SKU:590928e94cc1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP DARL 80V 8A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 80mA, 8A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 4A, 3V
  • Power - Max:64 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

Download product information

2N6299

Overview

The Microchip Technology 2N6299 is a PNP power bipolar junction transistor (BJT) configured as a Darlington pair. It is designed for through-hole mounting in the TO-66 (TO-213AA) package. The device supports a maximum collector-emitter voltage of 80V and a continuous collector current of 8A. With a maximum power dissipation rating of 64W, it operates within a junction temperature range of -65°C to 175°C.

Feature Summary

  • High current gain capability inherent to the Darlington configuration
  • Robust thermal performance suitable for high-power applications
  • Wide operating temperature range for demanding environments

Applications

  • General purpose power amplifier circuits
  • Low frequency switching applications

Procurement Notes

Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm the specific ordering suffix matches the required package variant. Ensure the supplier provides valid traceability documentation. Cross-reference the date code with recent product change notifications to confirm manufacturing consistency. Validate that the received units match the specified TO-66 physical dimensions.

Selection Notes

Select this component when high current drive is required at low voltages. The Darlington structure offers significant current amplification compared to standard single-transistor designs. Consider the TO-66 package size for adequate heat dissipation. Evaluate the 80V voltage limit against circuit peak requirements. Assess thermal management needs given the 64W power rating.

Part Context

This part belongs to the family of high-power PNP transistors manufactured by Microchip Technology. It utilizes the legacy 2N-series numbering convention. The TO-66 metal can package provides superior thermal conductivity and hermetic sealing options compared to plastic packages. It serves as a discrete solution for power control tasks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data.

2N62992N6299
$22.63
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