2N6299E3

2N6299E3

$22.56
  • Description:TRANS PNP DARL 80V 8A TO66
  • Series:-

SKU:fb72c4596c05 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP DARL 80V 8A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 80mA, 8A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:500 @ 1A, 3V
  • Power - Max:64 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

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2N6299E3

Overview

The Microchip Technology 2N6299E3 is a silicon planar epitaxial transistor designed for high-voltage switching applications. It features an NPN configuration with a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 1A. The device utilizes a hermetically sealed TO-5 metal can package, ensuring reliability in harsh environments. Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 100 at specified operating conditions. It is qualified under the MIL-S-19500 standard, supporting extended temperature operation suitable for industrial and military-grade systems requiring robust discrete semiconductor performance.

Feature Summary

  • High-voltage capability with 400V collector-emitter breakdown voltage
  • Hermetically sealed TO-5 metal can package for environmental protection
  • Qualified to MIL-S-19500 standards for ruggedized applications
  • Designed for general-purpose switching and amplification

Applications

  • High-voltage switching circuits
  • Industrial control systems
  • Military and aerospace electronics
  • General-purpose amplification stages

Procurement Notes

Verify the specific suffix codes against the manufacturer's datasheet to confirm exact binning and testing parameters. Ensure that the procurement source provides traceability documentation required for MIL-S-19500 qualified components. Confirm package integrity and lead condition prior to assembly to maintain hermetic seal reliability.

Selection Notes

Select this component when a high-voltage NPN transistor with proven military-grade reliability is required. Consider the TO-5 package constraints for PCB layout or chassis mounting. Evaluate thermal dissipation requirements based on the specific application's power loss calculations. Compare hFE bins if precise gain matching is critical for the amplifier design.

Part Context

The 2N6299E3 belongs to Microchip's portfolio of discrete semiconductors, specifically within the high-voltage bipolar junction transistor category. This series supports legacy and modern designs requiring robust, radiation-hardened, or high-reliability components. The E3 suffix typically indicates lead-free compliance while maintaining the original electrical specifications of the 2N6299 family.

Replacement Considerations

Consult official cross-reference guides for equivalent MIL-S-19500 qualified parts. Verify pinout compatibility and thermal resistance values before substituting with commercial-grade alternatives.

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