2N6299P

$29.52

Description：TRANS PNP DARL 80V 8A TO66
Series：-

SKU:3807b133739e Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS PNP DARL 80V 8A TO66
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：8:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：2V @ 80mA, 8A
Current - Collector Cutoff (Max)：500µA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 4A, 3V
Power - Max：64 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-213AA, TO-66-2
Supplier Device Package：TO-66 (TO-213AA)

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2N6299P

Overview

The Microchip Technology 2N6299P is a silicon PNP power transistor utilizing a Darlington configuration. It is designed for high-power switching applications within the Bipolar Junction Transistor (BJT) category. The device features an 80 V collector-emitter voltage rating and supports a continuous collector current of 8 A. With a maximum power dissipation capacity of 64 W, it is housed in a TO-66 (TO-213AA) through-hole package. This component is manufactured by Microchip Technology and is available in non-RoHS compliant variants.

Feature Summary

High-current capability with 8 A continuous collector current rating
Darlington structure providing high current gain for efficient driving
Robust 64 W power dissipation capacity for thermal management
Through-hole TO-66 package suitable for industrial mounting

Applications

High-power switching circuits
Industrial control systems
Power amplifier stages

Procurement Notes

Verify the specific ordering suffix to confirm compliance status, as the base part number may be available in both RoHS and non-RoHS versions. Ensure the procurement channel provides official Microchip Technology documentation or authorized distributor certification to guarantee authenticity. Confirm that the TO-66 package dimensions match the target PCB footprint requirements before finalizing the order.

Selection Notes

Select this component when a high-gain PNP transistor is required for driving significant loads. The Darlington configuration simplifies base drive circuitry compared to standard BJTs. Consider the 80 V voltage limit and 64 W thermal constraints during design. Evaluate the TO-66 package size against available board space and ensure adequate heatsinking infrastructure is present for optimal performance.

Part Context

The 2N6299P belongs to the family of single bipolar junction transistors produced by Microchip Technology. It serves as a discrete power semiconductor solution for analog and digital power control applications. The device is distinct from transient voltage suppressor diodes found in similar naming conventions, focusing strictly on amplification and switching functions rather than protection.