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Product Detailed Parameters
- Description：TRANS NPN DARL 60V 8A TO66
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 80mA, 8A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 4A, 3V
- Power - Max：75 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66 (TO-213AA)
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Overview
The Microchip Technology JANTXV2N6300 is a high-reliability NPN power Bipolar Junction Transistor (BJT) configured as a Darlington pair. Designed for aerospace and defense applications, it features a 60V collector-emitter voltage rating and an 8A continuous collector current capability. The device delivers 75W of power dissipation in a hermetically sealed TO-3 metal can package. It is manufactured under the JANTXV qualification standard to ensure strict performance consistency and radiation hardness suitable for space-grade environments.
Feature Summary
- Hermetically sealed TO-3 metal can construction for environmental protection
- JANTXV military grade qualification ensuring high reliability
- Darlington configuration providing high current gain
- Radiation hardened design for space applications
Applications
- Spacecraft power control systems
- Military communication equipment amplifiers
- High-reliability industrial switching circuits
- Defense radar system drivers
Procurement Notes
Verify the specific ordering suffix against the official Microchip datasheet to confirm the exact radiation tolerance and mechanical drawing requirements. Ensure the component meets the required JANTXV qualification standards for your specific mission profile before finalizing procurement.
Selection Notes
Select this component when high current drive is required with minimal base current in harsh environments. The TO-3 package facilitates effective heat sinking for high-power dissipation scenarios. Verify thermal management capabilities align with the 75W power rating under expected operating conditions.
Part Context
This part belongs to the Microsemi/Microchip family of radiation-hardened discrete semiconductors. These components are engineered specifically for the aerospace and defense sectors where standard commercial parts would fail due to radiation exposure or extreme environmental stress.
Replacement Considerations
Consult official Microchip documentation for qualified cross-reference part numbers. Do not substitute with commercial equivalents without verifying radiation hardness and hermetic sealing compliance.
