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The Central Semiconductor Corp 2N6301 TIN/LEAD is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting in the TO-66-2 package. It features an 80V collector-emitter voltage rating and supports a continuous collector current of 8A with a maximum power dissipation of 75W. The device exhibits a high DC current gain, ranging from 750 to 18,000 at 4A and 3V, and operates within a temperature range of -65°C to +200°C.
Verify that the specific order includes the TIN/LEAD suffix to ensure leaded plating, as PBFREE variants differ in surface finish. Confirm RoHS status requirements, as leaded components may not comply with standard restriction directives. Validate the TO-66-2 package dimensions against your PCB footprint before finalizing procurement to ensure mechanical compatibility.
Select this component when high current gain and wide operating temperature ranges are critical. The TO-66-2 package offers superior heat dissipation compared to plastic equivalents. Ensure the application voltage remains below 80V and current stays within 8A limits. Consider the tin/lead plating for specific soldering processes or regulatory exemptions where lead-free options are unsuitable.
This part belongs to the 2N63 series of silicon NPN transistors manufactured by Central Semiconductor. It serves as a high-performance alternative to legacy military specifications, offering comparable electrical characteristics in a standardized metal can package. The series is recognized for reliability in aerospace and defense electronics.
Direct substitutes include the 2N6301 PBFREE for lead-free compliance or the 2N6301SMD-JQR-B for surface-mount integration. Verify pinout compatibility and thermal resistance values when transitioning between through-hole and SMD packages.