2N6301 TIN/LEAD

2N6301 TIN/LEAD

$9.75
  • Description:8A 80V TH TRANSISTOR-BIPOLAR POW
  • Series:-

SKU:1c3a1326f042 Category: Brand:

  
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Product Detailed Parameters

  • Description:8A 80V TH TRANSISTOR-BIPOLAR POW
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 16mA, 4A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 4A, 3V
  • Power - Max:75 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66
  • Grade:-
  • Qualification:-

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2N6301 TIN/LEAD

Overview

The Central Semiconductor Corp 2N6301 TIN/LEAD is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting in the TO-66-2 package. It features an 80V collector-emitter voltage rating and supports a continuous collector current of 8A with a maximum power dissipation of 75W. The device exhibits a high DC current gain, ranging from 750 to 18,000 at 4A and 3V, and operates within a temperature range of -65°C to +200°C.

Feature Summary

  • High DC current gain capability for efficient signal amplification
  • Robust thermal performance supporting operation up to 200°C
  • Durable metal TO-66-2 hermetic packaging for harsh environments

Applications

  • High-power linear amplifier circuits
  • Industrial switching applications requiring high current handling
  • Military-grade electronic systems demanding extended temperature stability

Procurement Notes

Verify that the specific order includes the TIN/LEAD suffix to ensure leaded plating, as PBFREE variants differ in surface finish. Confirm RoHS status requirements, as leaded components may not comply with standard restriction directives. Validate the TO-66-2 package dimensions against your PCB footprint before finalizing procurement to ensure mechanical compatibility.

Selection Notes

Select this component when high current gain and wide operating temperature ranges are critical. The TO-66-2 package offers superior heat dissipation compared to plastic equivalents. Ensure the application voltage remains below 80V and current stays within 8A limits. Consider the tin/lead plating for specific soldering processes or regulatory exemptions where lead-free options are unsuitable.

Part Context

This part belongs to the 2N63 series of silicon NPN transistors manufactured by Central Semiconductor. It serves as a high-performance alternative to legacy military specifications, offering comparable electrical characteristics in a standardized metal can package. The series is recognized for reliability in aerospace and defense electronics.

Replacement Considerations

Direct substitutes include the 2N6301 PBFREE for lead-free compliance or the 2N6301SMD-JQR-B for surface-mount integration. Verify pinout compatibility and thermal resistance values when transitioning between through-hole and SMD packages.

2N6301 TIN/LEAD2N6301 TIN/LEAD
$9.75
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